STF11NM50N

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 8.5 A, 500 V, 0.4 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsDatasheet AN2842 +18

STF11NM50N

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 8.5 A, 500 V, 0.4 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsDatasheet AN2842 +18

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF11NM50N

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	547 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	470 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF11N60M2-EP Series

N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Part	Operating Temperature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STF11NM50N	150 °C	TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	500 V	4 V	19 nC	25 V	8.5 A	Through Hole	547 pF	TO-220-3 Full Pack	470 mOhm
STMicroelectronics STF11NM65N	150 °C	TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	650 V	4 V	29 nC	25 V	11 A	Through Hole	800 pF	TO-220-3 Full Pack	455 mOhm
STMicroelectronics STF11N50M2		TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	500 V	4 V		25 V	8 A	Through Hole	395 pF	TO-220-3 Full Pack		530 mOhm	-55 °C	150 °C	12 nC
STMicroelectronics STF11N60M2-EP		TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	600 V	4.75 V	12.4 nC	25 V	7.5 A	Through Hole		TO-220-3 Full Pack	595 mOhm		-55 °C	150 °C		390 pF
STMicroelectronics STF11NM80		TO-220FP	10 V	N-Channel		MOSFET (Metal Oxide)	800 V	5 V		30 V	11 A	Through Hole	1630 pF	TO-220-3 Full Pack	400 mOhm		-65 °C	150 °C	43.6 nC		35 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.48
Newark	Each	1	$ 1.67

Description

General part information

STF11N60M2-EP Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

STF11NM50N

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STF11NM50N

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Technical Specifications

STF11N60M2-EP Series

Pricing

Description

STF11N60M2-EP Series

Documents

Datasheet

AN2842

AN4250

TN1378

AN2344

UM1575

TN1225

TN1156

DS11396

AN4337

TN1224

Datasheet

Product Change Notice EN

STF11N60M2-EP Series