Technical Specifications
Parameters and characteristics for this part
| Specification | STF11NM80 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 43.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) [Max] | 35 W |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
STF11N60M2-EP Series
N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package
| Part | Operating Temperature | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 150 °C | TO-220FP | 10 V | N-Channel | 25 W | MOSFET (Metal Oxide) | 500 V | 4 V | 19 nC | 25 V | 8.5 A | Through Hole | 547 pF | TO-220-3 Full Pack | 470 mOhm | ||||||
STMicroelectronics | 150 °C | TO-220FP | 10 V | N-Channel | 25 W | MOSFET (Metal Oxide) | 650 V | 4 V | 29 nC | 25 V | 11 A | Through Hole | 800 pF | TO-220-3 Full Pack | 455 mOhm | ||||||
STMicroelectronics | TO-220FP | 10 V | N-Channel | 25 W | MOSFET (Metal Oxide) | 500 V | 4 V | 25 V | 8 A | Through Hole | 395 pF | TO-220-3 Full Pack | 530 mOhm | -55 °C | 150 °C | 12 nC | |||||
STMicroelectronics | TO-220FP | 10 V | N-Channel | 25 W | MOSFET (Metal Oxide) | 600 V | 4.75 V | 12.4 nC | 25 V | 7.5 A | Through Hole | TO-220-3 Full Pack | 595 mOhm | -55 °C | 150 °C | 390 pF | |||||
STMicroelectronics | TO-220FP | 10 V | N-Channel | MOSFET (Metal Oxide) | 800 V | 5 V | 30 V | 11 A | Through Hole | 1630 pF | TO-220-3 Full Pack | 400 mOhm | -65 °C | 150 °C | 43.6 nC | 35 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.12 | |
| 50 | $ 4.85 | |||
| 100 | $ 4.16 | |||
| 500 | $ 3.70 | |||
| 1000 | $ 3.16 | |||
| 2000 | $ 2.98 | |||
Description
General part information
STF11N60M2-EP Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources