| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW56N65M2N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package | FETs | 3 | 1 | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW57N65M5N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
STMicroelectronicsSTW58Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package | FETs | 4 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW58N60DM2AGAutomotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | MDmesh DM2 series | 3 | 1 | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW58N65DM2AGAutomotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package | FETs | 4 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW5NK100ZN-channel 1000 V, 2.7 Ohm typ., 3.5 A SuperMESH Power MOSFET in a TO-247 package | Semiconductors - Discretes | 3 | 1 | The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad... Read More |
STMicroelectronicsSTW60N | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTW62N65M5Automotive-grade N-channel 650 V, 0.041 Ohm typ., 46 A MDmesh M5 Power MOSFET in a TO-247 package | MDmesh M5 series | 3 | 1 | This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STMicroelectronicsSTW63N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | Power transistors | 2 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW63N65DM2N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | Power transistors | 2 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |