S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW50N65DM6N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package | FETs, MOSFETs | 3 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for... Read More |
STMicroelectronicsSTW52N60DM6N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package | Power MOSFETs | 1 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for... Read More |
STMicroelectronicsSTW52NK25ZN-channel 250 V, 33 mOhm typ., 52 A, SuperMESH Power MOSFET in a TO-247 package | FETs | 3 | 1 | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including... Read More |
STMicroelectronicsSTW55N | Transistors | 1 | 8 | |
STMicroelectronicsSTW55NM60NDN-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 1 | 1 | This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW56 | Single MOSFETs | 9 | 1 | |
STMicroelectronicsSTW56N60DM2N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | FETs, MOSFETs | 4 | 1 | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW56N60M2N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package | MDmesh M2 series | 3 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW56N60M2-4N-channel 600 V, 45 mOhm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 3 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW56N65DM2N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package | Power transistors | 1 | 1 | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |