STW63N65DM2 Series

N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Catalog

N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs (Max)	Package / Case	Technology	Rds On (Max) @ Id, Vgs
STMicroelectronics STW63N65DM2	10 V	-55 °C	150 °C	446 W	5500 pF	5 V	Through Hole	120 nC	650 V	60 A	TO-247-3	N-Channel	25 V	TO-247-3	MOSFET (Metal Oxide)	50 mOhm

Catalog

N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.