STW58N65DM2AG Series

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Catalog

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Technology	Grade	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Qualification	Vgs (Max)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW58N65DM2AG	MOSFET (Metal Oxide)	Automotive	65 mOhm	-55 °C	150 °C	N-Channel	10 V	650 V	5 V	360 W	88 nC	48 A	Through Hole	AEC-Q101	25 V	TO-247-3	TO-247-3	4100 pF

Catalog

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.