STW58N65DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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STW58N65DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsDatasheet TN1224 +21

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW58N65DM2AG

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	360 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW58 Series

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Technology	Grade	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Qualification	Vgs (Max)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW58N65DM2AG	MOSFET (Metal Oxide)	Automotive	65 mOhm	-55 °C	150 °C	N-Channel	10 V	650 V	5 V	360 W	88 nC	48 A	Through Hole	AEC-Q101	25 V	TO-247-3	TO-247-3	4100 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	600	$ 6.62
Newark	Each	1	$ 11.58

Description

General part information

STW58 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

STW58N65DM2AG

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STW58N65DM2AG

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Technical Specifications

STW58 Series

Pricing

Description

STW58 Series

Documents

Datasheet

TN1224

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UM1575

DS11265

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TN1156

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AN4250

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TN1378

Product Change Notice EN

Technical Specifications

STW58 Series