| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW18N60DM2N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package | Power MOSFETs | 1 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW18N60M2N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 1 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW18N65M5N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-247 package | FETs | 2 | 1 | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power... Read More |
STMicroelectronicsSTW18NM60NN-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247 | Power MOSFETs | 2 | 1 | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW18NM80N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package | Power MOSFETs | 1 | 1 | These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is... Read More |
STMicroelectronicsSTW19Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 2 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW19N | Discrete Semiconductor Products | 1 | 8 | |
| Power MOSFETs | 2 | 1 | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. | |
STMicroelectronicsSTW19NM60NAutomotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 2 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Fet Transistors | 12 | 1 | The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better... Read More | |