S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW12N170K5N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW12NK80ZN-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package | Power MOSFETs | 4 | 1 | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTW12NK90ZN-channel 900 V, 0.72 Ohm typ., 11 A SuperMESH Power MOSFET in TO-247 package | STPOWER N-channel MOSFETs > 700 V | 5 | 1 | This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements... Read More |
STMicroelectronicsSTW13N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package | Single | 9 | 1 | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW130 | Transistors | 1 | 8 | |
STMicroelectronicsSTW13N | Single | 4 | 8 | |
STMicroelectronicsSTW13N80K5N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package | Power transistors | 5 | 1 | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW13NK100ZN-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package | Fet Transistors | 3 | 1 | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including... Read More |
STMicroelectronicsSTW13NK60ZN-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in TO-247 package | FETs, MOSFETs | 4 | 1 | The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. |
STMicroelectronicsSTW14N | FETs, MOSFETs | 1 | 8 | |