| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTV250 | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTV270N-channel 40 V, 1.25 mOhm typ., 270 A STripFET F3 Power MOSFET in PowerSO-10 package | Power MOSFETs | 2 | 4 | This STripFET III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. |
STMicroelectronicsSTV270N4F3N-channel 40 V, 1.25 mOhm typ., 270 A STripFET F3 Power MOSFET in PowerSO-10 package | Power MOSFETs | 2 | 4 | This STripFET III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. |
STMicroelectronicsSTV300 | FETs | 2 | 1 | |
STMicroelectronicsSTV5348 | Integrated Circuits (ICs) | 2 | 8 | |
STMicroelectronicsSTV6412 | Integrated Circuits (ICs) | 1 | 8 | |
STMicroelectronicsSTV8206 | Integrated Circuits (ICs) | 1 | 8 | |
STMicroelectronicsSTW10N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 8 | 1 | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTW10N105K5N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package | Power MOSFETs | 1 | 1 | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW10N95K5N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. |