STW10 Series

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

Catalog

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW10NK80Z	72 nC	10 V	Through Hole	800 V	TO-247-3	TO-247-3	N-Channel	-55 °C	150 °C	9 A	4.5 V	2180 pF	MOSFET (Metal Oxide)	900 mOhm	30 V
STMicroelectronics STW10NK60Z		10 V	Through Hole	600 V	TO-247-3	TO-247-3	N-Channel	-55 °C	150 °C	10 A	4.5 V	1370 pF	MOSFET (Metal Oxide)	750 mOhm	30 V	156 W	70 nC

Catalog

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.