STW10NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 0.78 OHM, 9 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFETS IN TO-247 PACKAGE

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DocumentsAN2344 AN4250 +15

STW10NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 0.78 OHM, 9 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFETS IN TO-247 PACKAGE

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DocumentsAN2344 AN4250 +15

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.01
		30	$ 3.97
		120	$ 3.40
		510	$ 3.03
		1020	$ 2.59
		2010	$ 2.44
Newark	Each	1	$ 5.37
		10	$ 4.83
		120	$ 4.04
		510	$ 3.65
		1020	$ 3.22
		2520	$ 2.60

Description

General part information

STW10 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources

Specification	STW10NK80Z	STW10 Series

Current - Continuous Drain (Id) @ 25°C	9 A	9 - 10 A
Drain to Source Voltage (Vdss)	800 V	600 - 800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC	72 nC
Gate Charge (Qg) (Max) @ Vgs	-	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF	1370 - 2180 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	156 W
Rds On (Max) @ Id, Vgs	900 mOhm	750 - 900 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	4.5 V	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW10NK80Z	72 nC	10 V	Through Hole	800 V	TO-247-3	TO-247-3	N-Channel	-55 °C	150 °C	9 A	4.5 V	2180 pF	MOSFET (Metal Oxide)	900 mOhm	30 V
STMicroelectronics STW10NK60Z		10 V	Through Hole	600 V	TO-247-3	TO-247-3	N-Channel	-55 °C	150 °C	10 A	4.5 V	1370 pF	MOSFET (Metal Oxide)	750 mOhm	30 V	156 W	70 nC

STW10NK80Z

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STW10NK80Z

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Pricing

Description

STW10 Series

Documents

AN2344

AN4250

TN1156

TN1224

TN1225

UM1575

TN1378

AN4337

AN2842

DS2835

Product Change Notice EN

Datasheet

Datasheet

Technical Specifications

STW10 Series