STW13N80K5 Series

N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

Catalog

N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics STW13N80K5	10 V	TO-247-3	12 A	5 V	-55 °C	150 °C	870 pF	MOSFET (Metal Oxide)	450 mOhm	29 nC	Through Hole	30 V	N-Channel	TO-247-3	190 W	800 V

Catalog

N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.