STW13N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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DocumentsProduct Change Notice EN Datasheet +17

STW13N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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DocumentsProduct Change Notice EN Datasheet +17

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW13N80K5	STW13 Series

Current - Continuous Drain (Id) @ 25°C	12 A	12 - 13 A
Drain to Source Voltage (Vdss)	800 V	600 - 800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC	29 - 92 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF	870 - 2030 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	150 W
Power Dissipation (Max) [Max]	190 W	190 W
Rds On (Max) @ Id, Vgs	450 mOhm	450 - 550 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	5 V	4.5 - 5 V

STW13 Series

N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
STMicroelectronics STW13N80K5	10 V	TO-247-3	12 A	5 V	-55 °C	150 °C	870 pF	MOSFET (Metal Oxide)	450 mOhm	29 nC	Through Hole	30 V	N-Channel	TO-247-3	190 W	800 V
STMicroelectronics STW13NK60Z	10 V	TO-247-3	13 A	4.5 V	-55 °C	150 °C	2030 pF	MOSFET (Metal Oxide)	550 mOhm	92 nC	Through Hole	30 V	N-Channel	TO-247-3		600 V	150 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 3.43
		90	$ 2.94
		300	$ 2.78
		750	$ 2.62
		1500	$ 2.24
		3000	$ 2.11
LCSC	Piece	1	$ 5.67
		10	$ 4.89
		30	$ 4.42
		100	$ 3.95
		500	$ 3.73
		1000	$ 3.63
Newark	Each	1	$ 5.71
		10	$ 4.83
		25	$ 3.94
		50	$ 3.78
		100	$ 3.62
		250	$ 3.29

Description

General part information

STW13 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources

STW13N80K5

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STW13N80K5

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Technical Specifications

STW13 Series

Pricing

Description

STW13 Series

Documents

Product Change Notice EN

Datasheet

Datasheet

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Technical Specifications

STW13 Series