STW20 Series

N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET

Catalog

N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW20NM60	Through Hole	20 A	N-Channel	192 W	TO-247-3	290 mOhm	54 nC	TO-247-3	1500 pF	600 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V
STMicroelectronics STW20NM60FD	Through Hole	20 A	N-Channel	214 W	TO-247-3	290 mOhm		TO-247-3	1300 pF	600 V	MOSFET (Metal Oxide)	30 V		5 V	10 V	150 °C	-65 °C
STMicroelectronics STW20NK50Z	Through Hole	17 A	N-Channel		TO-247-3	270 mOhm	119 nC	TO-247-3	2600 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	4.5 V	10 V			190 W
STMicroelectronics STW20NM50FD	Through Hole	20 A	N-Channel	214 W	TO-247-3		53 nC	TO-247-3	1380 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V				250 mOhm

Catalog

N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET

Description

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.