STW20NM60FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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STW20NM60FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.50
		30	$ 3.84
		120	$ 3.38
		510	$ 3.14
Newark	Each	1	$ 7.60
		10	$ 6.55
		25	$ 5.22
		60	$ 4.88
		120	$ 4.54
		270	$ 3.94

Description

General part information

STW20 Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources

Specification	STW20NM60FD	STW20 Series

Current - Continuous Drain (Id) @ 25°C	20 A	17 - 20 A
Drain to Source Voltage (Vdss)	600 V	500 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	53 - 119 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF	1300 - 2600 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	-	150 °C
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-65 °C	-65 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	214 W	192 - 214 W
Power Dissipation (Max)	-	190 W
Rds On (Max) @ Id, Vgs	290 mOhm	270 - 290 mOhm
Rds On (Max) @ Id, Vgs	-	250 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	5 V	4.5 - 5 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW20NM60	Through Hole	20 A	N-Channel	192 W	TO-247-3	290 mOhm	54 nC	TO-247-3	1500 pF	600 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V
STMicroelectronics STW20NM60FD	Through Hole	20 A	N-Channel	214 W	TO-247-3	290 mOhm		TO-247-3	1300 pF	600 V	MOSFET (Metal Oxide)	30 V		5 V	10 V	150 °C	-65 °C
STMicroelectronics STW20NK50Z	Through Hole	17 A	N-Channel		TO-247-3	270 mOhm	119 nC	TO-247-3	2600 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	4.5 V	10 V			190 W
STMicroelectronics STW20NM50FD	Through Hole	20 A	N-Channel	214 W	TO-247-3		53 nC	TO-247-3	1380 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V				250 mOhm

STW20NM60FD

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STW20NM60FD

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Pricing

Description

STW20 Series

Documents

Datasheet

Technical Specifications

STW20 Series