STW20NM60

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STMicroelectronics

POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN +17

STW20NM60

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN +17

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NM60

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW20NM60 Series

N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW20NM60	Through Hole	20 A	N-Channel	192 W	TO-247-3	290 mOhm	54 nC	TO-247-3	1500 pF	600 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.12
		30	$ 4.85
		120	$ 4.16
		510	$ 3.70
		1020	$ 3.16
		2010	$ 2.98
Newark	Each	1	$ 7.30
		10	$ 6.30
		25	$ 4.74
		60	$ 4.45
		120	$ 4.15
		270	$ 3.74

Description

General part information

STW20NM60 Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources

STW20NM60

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STW20NM60

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Technical Specifications

STW20NM60 Series

Pricing

Description

STW20NM60 Series

Documents

Product Change Notice EN

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Datasheet

Technical Specifications

STW20NM60 Series