STW19NM60N Series

Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package

Catalog

Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Qualification	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Power Dissipation (Max) [Max]	Vgs (Max)
STMicroelectronics STW19NM60N	TO-247-3	-55 °C	150 °C	35 nC	MOSFET (Metal Oxide)	285 mOhm	TO-247-3	AEC-Q101	600 V	4 V	13 A	N-Channel	10 V	Through Hole	1000 pF	Automotive	110 W	25 V

Catalog

Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.