SUM110 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 40V 29A/110A TO263

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SUM110N04-2M1P-E3	2.1 mOhm	4.5 V 10 V	2.5 V	TO-263 (D2PAK)	20 V	Surface Mount	3.13 W 312 W	N-Channel	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	18800 pF	-55 °C	150 °C	29 A 110 A	360 nC
Vishay General Semiconductor - Diodes Division SUM110N03-03P-E3	2.6 mOhm	4.5 V 10 V	3 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 375 W	N-Channel	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	12100 pF	-55 °C	175 ░C	110 A
Vishay General Semiconductor - Diodes Division SUM110N05-06L-E3	6 mOhm		3 V	TO-263 (D2PAK)		Surface Mount		N-Channel	55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	3300 pF			110 A		100 nC
Vishay General Semiconductor - Diodes Division SUM110N04-2M3L-E3	2.3 mOhm	4.5 V 10 V	3 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 375 W	N-Channel	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	13600 pF	-55 °C	175 ░C	110 A	360 nC
Vishay General Semiconductor - Diodes Division SUM110N10-09-E3	9.5 mOhm	10 V	4 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 375 W	N-Channel	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	6700 pF	-55 °C	175 ░C	110 A		160 nC
Vishay General Semiconductor - Diodes Division SUM110N03-04P-E3	4.2 mOhm	4.5 V 10 V	3 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 120 W	N-Channel	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	5100 pF	-55 °C	175 ░C	110 A	60 nC
Vishay General Semiconductor - Diodes Division SUM110P04-05-E3		10 V	4 V	TO-263 (D2PAK)	20 V	Surface Mount	15 W 375 W	P-Channel	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	11300 pF	-55 °C	175 ░C	110 A		280 nC
Vishay General Semiconductor - Diodes Division SUM110P04-04L-E3	4.2 mOhm	4.5 V 10 V	3 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 375 W	P-Channel	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	11200 pF	-55 °C	175 ░C	110 A	350 nC
Vishay General Semiconductor - Diodes Division SUM110N04-05H-E3	5.3 mOhm	10 V	5 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 150 W	N-Channel	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	6700 pF	-55 °C	175 ░C	110 A	95 nC
Vishay General Semiconductor - Diodes Division SUM110N06-3M4L-E3	3.4 mOhm	4.5 V 10 V	3 V	TO-263 (D2PAK)	20 V	Surface Mount	3.75 W 375 W	N-Channel	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)		-55 °C	175 ░C	110 A		300 nC	12900 pF