
SUM110N03-03P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 110A TO263
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SUM110N03-03P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 110A TO263
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SUM110N03-03P-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 3.75 W, 375 W |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUM110 Series
N-Channel 30 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2PAK)
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Technical documentation and resources
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