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SUM110N03-04P-E3 - SQM120P04-04L_GE3

SUM110N03-04P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 110A TO263

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SUM110N03-04P-E3 - SQM120P04-04L_GE3

SUM110N03-04P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 110A TO263

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSUM110N03-04P-E3
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
Input Capacitance (Ciss) (Max) @ Vds5100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)120 W, 3.75 W
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SUM110 Series

N-Channel 30 V 110A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources