
SUM110N04-2M1P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 29A/110A TO263
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SUM110N04-2M1P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 29A/110A TO263
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SUM110N04-2M1P-E3 | 
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A, 29 A | 
| Drain to Source Voltage (Vdss) | 40 V | 
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 
| FET Type | N-Channel | 
| Gate Charge (Qg) (Max) @ Vgs | 360 nC | 
| Input Capacitance (Ciss) (Max) @ Vds | 18800 pF | 
| Mounting Type | Surface Mount | 
| Operating Temperature [Max] | 150 °C | 
| Operating Temperature [Min] | -55 °C | 
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | 
| Power Dissipation (Max) | 3.13 W, 312 W | 
| Rds On (Max) @ Id, Vgs | 2.1 mOhm | 
| Supplier Device Package | TO-263 (D2PAK) | 
| Technology | MOSFET (Metal Oxide) | 
| Vgs (Max) | 20 V | 
| Vgs(th) (Max) @ Id | 2.5 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUM110 Series
N-Channel 40 V 29A (Ta), 110A (Tc) 3.13W (Ta), 312W (Tc) Surface Mount TO-263 (D2PAK)
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Technical documentation and resources