IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 12 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 65 nC | MOSFET (Metal Oxide) | 4 V | TO-220-3 | -55 °C | 175 ░C | 10 V | 1690 pF | TO-220AB | Through Hole | 57 A | 12 mOhm | 60 V | 20 V | N-Channel | 92 W | |||
Infineon Technologies | 60 nC | MOSFET (Metal Oxide) | 4 V | TO-220-3 | -55 °C | 175 ░C | 10 V | 1360 pF | TO-220AB | Through Hole | 48 A | 23 mOhm | 60 V | 20 V | N-Channel | 110 W | |||
Infineon Technologies | 63 nC | MOSFET (Metal Oxide) | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 10 V | 1470 pF | D2PAK | Surface Mount | 49 A | 55 V | 20 V | N-Channel | 17.5 mOhm | 3.8 W 94 W | |||
Infineon Technologies | MOSFET (Metal Oxide) | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 ░C | 10 V | 1420 pF | TO-262 | Through Hole | 51 A | 13.9 mOhm | 55 V | 20 V | N-Channel | 80 W | 43 nC | |||
Infineon Technologies | 60 nC | MOSFET (Metal Oxide) | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 10 V | 1360 pF | D2PAK | Surface Mount | 48 A | 23 mOhm | 60 V | 20 V | N-Channel | 110 W | |||
Infineon Technologies | MOSFET (Metal Oxide) | 4 V | TO-220-3 | -55 °C | 175 ░C | 10 V | 1812 pF | TO-220AB | Through Hole | 55 A | 16.5 mOhm | 60 V | 20 V | N-Channel | 115 W | ||||
Infineon Technologies | MOSFET (Metal Oxide) | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 ░C | 10 V | 1420 pF | TO-262 | Through Hole | 51 A | 13.9 mOhm | 55 V | 20 V | N-Channel | 80 W | 43 nC | |||
Infineon Technologies | 65 nC | MOSFET (Metal Oxide) | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 175 ░C | 10 V | 1690 pF | D2PAK | Surface Mount | 57 A | 12 mOhm | 60 V | 20 V | N-Channel | 92 W | |||
Infineon Technologies | MOSFET (Metal Oxide) | 4 V | TO-220-3 | -55 °C | 175 ░C | 10 V | 1812 pF | TO-220AB | Through Hole | 55 A | 16.5 mOhm | 60 V | 20 V | N-Channel | 115 W | ||||
Infineon Technologies | 63 nC | MOSFET (Metal Oxide) | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | -55 °C | 175 ░C | 10 V | 1470 pF | TO-262 | Through Hole | 49 A | 55 V | 20 V | N-Channel | 17.5 mOhm | 3.8 W 94 W |