IRFZ44VPBF

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 55 A, 0.0165 OHM, TO-220AB, THROUGH HOLE

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IRFZ44VPBF

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 55 A, 0.0165 OHM, TO-220AB, THROUGH HOLE

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DocumentsEOL Notices EN IR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ44VPBF

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1812 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFZ44 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRFZ44VZPBF	65 nC	MOSFET (Metal Oxide)	4 V	TO-220-3	-55 °C	175 ░C	10 V	1690 pF	TO-220AB	Through Hole	57 A	12 mOhm	60 V	20 V	N-Channel	92 W
Infineon Technologies IRFZ44EPBF	60 nC	MOSFET (Metal Oxide)	4 V	TO-220-3	-55 °C	175 ░C	10 V	1360 pF	TO-220AB	Through Hole	48 A	23 mOhm	60 V	20 V	N-Channel	110 W
Infineon Technologies 94-2386	63 nC	MOSFET (Metal Oxide)	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	10 V	1470 pF	D2PAK	Surface Mount	49 A		55 V	20 V	N-Channel		17.5 mOhm	3.8 W 94 W
Infineon Technologies IRFZ44ZLPBF		MOSFET (Metal Oxide)	4 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	10 V	1420 pF	TO-262	Through Hole	51 A	13.9 mOhm	55 V	20 V	N-Channel			80 W	43 nC
Infineon Technologies IRFZ44ESTRRPBF	60 nC	MOSFET (Metal Oxide)	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	10 V	1360 pF	D2PAK	Surface Mount	48 A	23 mOhm	60 V	20 V	N-Channel	110 W
Infineon Technologies IRFZ44VPBF		MOSFET (Metal Oxide)	4 V	TO-220-3	-55 °C	175 ░C	10 V	1812 pF	TO-220AB	Through Hole	55 A	16.5 mOhm	60 V	20 V	N-Channel			115 W
Infineon Technologies IRFZ44ZLPBF		MOSFET (Metal Oxide)	4 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	10 V	1420 pF	TO-262	Through Hole	51 A	13.9 mOhm	55 V	20 V	N-Channel			80 W	43 nC
Infineon Technologies IRFZ44VZSPBF	65 nC	MOSFET (Metal Oxide)	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	10 V	1690 pF	D2PAK	Surface Mount	57 A	12 mOhm	60 V	20 V	N-Channel	92 W
Infineon Technologies IRFZ44VPBF		MOSFET (Metal Oxide)	4 V	TO-220-3	-55 °C	175 ░C	10 V	1812 pF	TO-220AB	Through Hole	55 A	16.5 mOhm	60 V	20 V	N-Channel			115 W
Infineon Technologies IRFZ44NLPBF	63 nC	MOSFET (Metal Oxide)	4 V	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	10 V	1470 pF	TO-262	Through Hole	49 A		55 V	20 V	N-Channel		17.5 mOhm	3.8 W 94 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.70
Digikey	Bulk	500	$ 0.63
		500	$ 0.63
	Tube	1	$ 2.00
		1	$ 2.00
		10	$ 1.28
		10	$ 1.28
		100	$ 0.86
		100	$ 0.86
		500	$ 0.69
		500	$ 0.69
		1000	$ 0.63
		1000	$ 0.63
Newark	Each	1	$ 1.41
		10	$ 1.20
		100	$ 0.96
		500	$ 0.81
		1000	$ 0.66

Description

General part information

IRFZ44 Series

The IRFZ44VPBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.