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IRFZ44EPBF - TO-220AB PKG

IRFZ44EPBF

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 48 A, 0.023 OHM, TO-220AB, THROUGH HOLE

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IRFZ44EPBF - TO-220AB PKG

IRFZ44EPBF

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 48 A, 0.023 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFZ44EPBF
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds1360 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.04
10$ 1.31
100$ 0.88
500$ 0.70
NewarkEach 1$ 0.97
10$ 0.92
100$ 0.85
500$ 0.82
1000$ 0.79

Description

General part information

IRFZ44 Series

The IRFZ44EPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.