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IRFZ44NLPBF - TO-262-3

IRFZ44NLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 17.5 MOHM;

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Search across all available documentation for this part.

DocumentsIRFZ44NLFIT Report - IRFZ44NL+2
IRFZ44NLPBF - TO-262-3

IRFZ44NLPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 17.5 MOHM;

Deep-Dive with AI

DocumentsIRFZ44NLFIT Report - IRFZ44NL+2

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFZ44NLPBF
Current - Continuous Drain (Id) @ 25°C49 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds1470 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)94 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]17.5 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IRFZ44 Series

PartGate Charge (Qg) (Max) @ Vgs [Max]TechnologyVgs(th) (Max) @ IdPackage / CaseOperating Temperature [Min]Operating Temperature [Max]Drive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsSupplier Device PackageMounting TypeCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Vgs (Max)FET TypePower Dissipation (Max) [Max]Rds On (Max) @ Id, Vgs [Max]Power Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies
IRFZ44VZPBF
65 nC
MOSFET (Metal Oxide)
4 V
TO-220-3
-55 °C
175 ░C
10 V
1690 pF
TO-220AB
Through Hole
57 A
12 mOhm
60 V
20 V
N-Channel
92 W
Infineon Technologies
IRFZ44EPBF
60 nC
MOSFET (Metal Oxide)
4 V
TO-220-3
-55 °C
175 ░C
10 V
1360 pF
TO-220AB
Through Hole
48 A
23 mOhm
60 V
20 V
N-Channel
110 W
Infineon Technologies
94-2386
63 nC
MOSFET (Metal Oxide)
4 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
-55 °C
175 ░C
10 V
1470 pF
D2PAK
Surface Mount
49 A
55 V
20 V
N-Channel
17.5 mOhm
3.8 W
94 W
Infineon Technologies
IRFZ44ZLPBF
MOSFET (Metal Oxide)
4 V
I2PAK
TO-262-3 Long Leads
TO-262AA
-55 °C
175 ░C
10 V
1420 pF
TO-262
Through Hole
51 A
13.9 mOhm
55 V
20 V
N-Channel
80 W
43 nC
Infineon Technologies
IRFZ44ESTRRPBF
60 nC
MOSFET (Metal Oxide)
4 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
-55 °C
175 ░C
10 V
1360 pF
D2PAK
Surface Mount
48 A
23 mOhm
60 V
20 V
N-Channel
110 W
Infineon Technologies
IRFZ44VPBF
MOSFET (Metal Oxide)
4 V
TO-220-3
-55 °C
175 ░C
10 V
1812 pF
TO-220AB
Through Hole
55 A
16.5 mOhm
60 V
20 V
N-Channel
115 W
Infineon Technologies
IRFZ44ZLPBF
MOSFET (Metal Oxide)
4 V
I2PAK
TO-262-3 Long Leads
TO-262AA
-55 °C
175 ░C
10 V
1420 pF
TO-262
Through Hole
51 A
13.9 mOhm
55 V
20 V
N-Channel
80 W
43 nC
Infineon Technologies
IRFZ44VZSPBF
65 nC
MOSFET (Metal Oxide)
4 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
-55 °C
175 ░C
10 V
1690 pF
D2PAK
Surface Mount
57 A
12 mOhm
60 V
20 V
N-Channel
92 W
Infineon Technologies
IRFZ44VPBF
MOSFET (Metal Oxide)
4 V
TO-220-3
-55 °C
175 ░C
10 V
1812 pF
TO-220AB
Through Hole
55 A
16.5 mOhm
60 V
20 V
N-Channel
115 W
Infineon Technologies
IRFZ44NLPBF
63 nC
MOSFET (Metal Oxide)
4 V
I2PAK
TO-262-3 Long Leads
TO-262AA
-55 °C
175 ░C
10 V
1470 pF
TO-262
Through Hole
49 A
55 V
20 V
N-Channel
17.5 mOhm
3.8 W
94 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRFZ44 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.