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DMTH69M8LFVWQ-7 - DMTH43M8LFVW-7

DMTH69M8LFVWQ-7

Active
Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI3333-8/SWP T&R 2K

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DMTH69M8LFVWQ-7 - DMTH43M8LFVW-7

DMTH69M8LFVWQ-7

Active
Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI3333-8/SWP T&R 2K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH69M8LFVWQ-7
Current - Continuous Drain (Id) @ 25°C15.9 A, 45.4 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1925 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)3.6 W, 29.4 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.57
100$ 0.40
500$ 0.33
1000$ 0.28
Digi-Reel® 1$ 0.66
10$ 0.57
100$ 0.40
500$ 0.33
1000$ 0.28
Tape & Reel (TR) 2000$ 0.25
6000$ 0.24
10000$ 0.22

Description

General part information

DMTH69M8LFVWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.