Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH69M8LFVWQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15.9 A, 45.4 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1925 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3.6 W, 29.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.29 | |
| 6000 | $ 0.26 | |||
| 9000 | $ 0.25 | |||
| 15000 | $ 0.25 | |||
Description
General part information
DMTH69M8LFVWQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.
Documents
Technical documentation and resources