DMTH69M8LFVWQ Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Qualification	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMTH69M8LFVWQ-7	Surface Mount Wettable Flank	AEC-Q101	8-PowerVDFN	-55 °C	175 ░C	1925 pF	33.5 nC	Automotive	16 V	N-Channel	3 V	60 V	PowerDI3333-8 (SWP) Type UX	15.9 A 45.4 A	3.6 W 29.4 W	MOSFET (Metal Oxide)	9.5 mOhm	4.5 V 10 V
Diodes Inc DMTH69M8LFVWQ-13	Surface Mount Wettable Flank	AEC-Q101	8-PowerVDFN	-55 °C	175 ░C	1925 pF	33.5 nC	Automotive	16 V	N-Channel	3 V	60 V	PowerDI3333-8 (SWP) Type UX	15.9 A 45.4 A	3.6 W 29.4 W	MOSFET (Metal Oxide)	9.5 mOhm	4.5 V 10 V

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C—Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application

• Low On-Resistance

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH69M8LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.