DMP1012UFDF-13
ActiveDiodes Inc
12V 2.11W 15MΩ@4.5V,5A 900MV 1 PIECE P-CHANNEL UDFN2020-6 MOSFETS ROHS
Deep-Dive with AI
Search across all available documentation for this part.
DMP1012UFDF-13
ActiveDiodes Inc
12V 2.11W 15MΩ@4.5V,5A 900MV 1 PIECE P-CHANNEL UDFN2020-6 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1012UFDF-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.6 A, 20 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1344 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 720 mW |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
DMP1012UCB9 Series
12V P-Channel Enhancement Mode MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | U-DFN2020-6 (Type F) | 12.6 A 20 A | 15 mOhm | 720 mW | Surface Mount | 1.8 V 4.5 V | 1344 pF | 6-UDFN Exposed Pad | 8 V | P-Channel | MOSFET (Metal Oxide) | 31 nC | 12 V | -55 °C | 150 °C | 900 mV | |||
Diodes Inc | U-WLB1515-9 | 10 A | 890 mW | Surface Mount | 2.5 V 4.5 V | 1060 pF | 9-UFBGA WLBGA | P-Channel | MOSFET (Metal Oxide) | 8 V | -55 °C | 150 °C | 1.1 V | -6 V | 10.5 nC | 10 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMP1012UCB9 Series
This new generation MOSFET has been designed to minimize theon-state resistance (RDS(on)) and yet maintain superior switchingperformance, making it ideal for high efficiency power managementapplications.
Documents
Technical documentation and resources