DMP1012UCB9 Series

12V P-Channel Enhancement Mode MOSFET

Catalog

12V P-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMP1012UFDF-13	U-DFN2020-6 (Type F)	12.6 A 20 A	15 mOhm	720 mW	Surface Mount	1.8 V 4.5 V	1344 pF	6-UDFN Exposed Pad	8 V	P-Channel	MOSFET (Metal Oxide)	31 nC	12 V	-55 °C	150 °C	900 mV
Diodes Inc DMP1012UCB9-7	U-WLB1515-9	10 A		890 mW	Surface Mount	2.5 V 4.5 V	1060 pF	9-UFBGA WLBGA		P-Channel	MOSFET (Metal Oxide)		8 V	-55 °C	150 °C	1.1 V	-6 V	10.5 nC	10 mOhm

Catalog

12V P-Channel Enhancement Mode MOSFET

Key Features

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize theon-state resistance (RDS(on)) and yet maintain superior switchingperformance, making it ideal for high efficiency power managementapplications.