Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1012UCB9-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | WLBGA, 9-UFBGA |
| Power Dissipation (Max) | 890 mW |
| Rds On (Max) @ Id, Vgs [Max] | 10 mOhm |
| Supplier Device Package | U-WLB1515-9 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.30 | |
| 6000 | $ 0.28 | |||
| 9000 | $ 0.26 | |||
| 15000 | $ 0.26 | |||
Description
General part information
DMP1012UCB9 Series
This new generation MOSFET has been designed to minimize theon-state resistance (RDS(on)) and yet maintain superior switchingperformance, making it ideal for high efficiency power managementapplications.
Documents
Technical documentation and resources