DMN65D8LDW-7

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.15A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-6

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DMN65D8LDW-7

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.15A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-6

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN65D8LDW-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.87 nC
Input Capacitance (Ciss) (Max) @ Vds	22 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

DMN65D8LDWQ Series

Dual N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Configuration	Power - Max [Max]	Grade	Qualification
Diodes Inc DMN65D8LQ-7	SC-59 SOT-23-3 TO-236-3	20 V	SOT-23-3	3 Ohm	2 V	-55 °C	150 °C	N-Channel	Surface Mount	10 V	5 V	0.87 nC	60 V	22 pF	MOSFET (Metal Oxide)	310 mA
Diodes Inc DMN65D9L-13	SC-59 SOT-23-3 TO-236-3	16 V	SOT-23-3		2.5 V	-55 °C	150 °C	N-Channel	Surface Mount	4 V	10 V		60 V	41 pF	MOSFET (Metal Oxide)	335 mA	270 mW	4 Ohm	0.4 nC
Diodes Inc DMN65D8LW-7	SC-70 SOT-323	20 V	SOT-323	3 Ohm	2 V	-55 °C	150 °C	N-Channel	Surface Mount	10 V	5 V	0.87 nC	60 V	22 pF	MOSFET (Metal Oxide)	300 mA	300 mW
Diodes Inc DMN65D8LDW-7	6-TSSOP SC-88 SOT-363		SOT-363	6 Ohm	2 V	-55 °C	150 °C		Surface Mount			0.87 nC	60 V	22 pF	MOSFET (Metal Oxide)	180 mA				Logic Level Gate	2 N-Channel (Dual)	300 mW
Diodes Inc DMN65D8LDWQ-7	6-TSSOP SC-88 SOT-363		SOT-363	6 Ohm	2 V	-55 °C	150 °C		Surface Mount			0.87 nC	60 V	22 pF	MOSFET (Metal Oxide)	180 mA				Logic Level Gate	2 N-Channel (Dual)	300 mW	Automotive	AEC-Q101
Diodes Inc DMN65D8LT-13	SOT-523	20 V	SOT-523	5 Ohm	2 V	-55 °C	150 °C	N-Channel	Surface Mount	10 V	5 V		60 V	24 pF	MOSFET (Metal Oxide)	210 mA	300 mW		0.4 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.35
		10	$ 0.24
		100	$ 0.12
		500	$ 0.10
		1000	$ 0.07
	Digi-Reel®	1	$ 0.35
		10	$ 0.24
		100	$ 0.12
		500	$ 0.10
		1000	$ 0.07
	Tape & Reel (TR)	3000	$ 0.06
		6000	$ 0.06
		9000	$ 0.05
		30000	$ 0.05
		75000	$ 0.04
		150000	$ 0.04

Description

General part information

DMN65D8LDWQ Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMN65D8LDW-7

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DMN65D8LDW-7

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Technical Specifications

DMN65D8LDWQ Series

Pricing

Description

DMN65D8LDWQ Series

Documents

Datasheet

Package PDF

Recommended Soldering Techniques

Datasheet

DMN65D8LDWQ Series