DMN65D8LQ-7
ActiveDiodes Inc
TRANS MOSFET N-CH 60V 0.31A 3-PIN SOT-23 T/R
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DMN65D8LQ-7
ActiveDiodes Inc
TRANS MOSFET N-CH 60V 0.31A 3-PIN SOT-23 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN65D8LQ-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 310 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
DMN65D8LDWQ Series
Dual N-Channel Enhancement Mode MOSFET
| Part | Package / Case | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature | Configuration | Power - Max [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | 20 V | SOT-23-3 | 3 Ohm | 2 V | -55 °C | 150 °C | N-Channel | Surface Mount | 10 V | 5 V | 0.87 nC | 60 V | 22 pF | MOSFET (Metal Oxide) | 310 mA | ||||||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | 16 V | SOT-23-3 | 2.5 V | -55 °C | 150 °C | N-Channel | Surface Mount | 4 V | 10 V | 60 V | 41 pF | MOSFET (Metal Oxide) | 335 mA | 270 mW | 4 Ohm | 0.4 nC | |||||||
Diodes Inc | SC-70 SOT-323 | 20 V | SOT-323 | 3 Ohm | 2 V | -55 °C | 150 °C | N-Channel | Surface Mount | 10 V | 5 V | 0.87 nC | 60 V | 22 pF | MOSFET (Metal Oxide) | 300 mA | 300 mW | |||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | SOT-363 | 6 Ohm | 2 V | -55 °C | 150 °C | Surface Mount | 0.87 nC | 60 V | 22 pF | MOSFET (Metal Oxide) | 180 mA | Logic Level Gate | 2 N-Channel (Dual) | 300 mW | |||||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | SOT-363 | 6 Ohm | 2 V | -55 °C | 150 °C | Surface Mount | 0.87 nC | 60 V | 22 pF | MOSFET (Metal Oxide) | 180 mA | Logic Level Gate | 2 N-Channel (Dual) | 300 mW | Automotive | AEC-Q101 | |||||||
Diodes Inc | SOT-523 | 20 V | SOT-523 | 5 Ohm | 2 V | -55 °C | 150 °C | N-Channel | Surface Mount | 10 V | 5 V | 60 V | 24 pF | MOSFET (Metal Oxide) | 210 mA | 300 mW | 0.4 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.21 | |
| 10 | $ 0.14 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.06 | |||
| 1000 | $ 0.04 | |||
| Digi-Reel® | 1 | $ 0.21 | ||
| 10 | $ 0.14 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.06 | |||
| 1000 | $ 0.04 | |||
| Tape & Reel (TR) | 3000 | $ 0.04 | ||
| 6000 | $ 0.03 | |||
| 9000 | $ 0.03 | |||
| 30000 | $ 0.03 | |||
| 75000 | $ 0.02 | |||
| 150000 | $ 0.02 | |||
Description
General part information
DMN65D8LDWQ Series
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources