Catalog
Dual N-Channel Enhancement Mode MOSFET
Key Features
• Low On-Resistance: RDS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 1kV
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. "Green" Device
• For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certifiedfacilities), please contact us or your local Diodesrepresentative.https://www.diodes.com/quality/productdefinitions/
Description
AI
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.