IR2110SPBF

NRND

Infineon Technologies

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

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IR2110SPBF

NRND

Infineon Technologies

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2110SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	16-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	3.3 V

IR2110 Series

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Package / Case [x]	Package / Case	Package / Case [y]	Input Type	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Gate Type	Package / Case	Package / Case	Package / Case	Package / Case [custom]	Package / Case [custom]
Infineon Technologies IR2110SPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	14-DIP	25 ns	17 ns	Independent	0.3 "	14-DIP	7.62 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-1PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2		25 ns	17 ns	Independent		14-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET	7.62 mm	13 Leads	0.3 in
Infineon Technologies IR2110STR	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110S	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110STRPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-2	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	16-PDIP	25 ns	17 ns	Independent		14 Leads 16-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET				0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.44
		10	$ 3.98
		45	$ 3.77
		135	$ 3.26
		270	$ 3.10
		540	$ 2.78
		1035	$ 2.34
		2520	$ 2.23

Description

General part information

IR2110 Series

The IR2110SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.

Documents

Technical documentation and resources