IR2110 Series

Catalog

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Package / Case [x]	Package / Case	Package / Case [y]	Input Type	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Gate Type	Package / Case	Package / Case	Package / Case	Package / Case [custom]	Package / Case [custom]
Infineon Technologies IR2110SPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	14-DIP	25 ns	17 ns	Independent	0.3 "	14-DIP	7.62 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-1PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2		25 ns	17 ns	Independent		14-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET	7.62 mm	13 Leads	0.3 in
Infineon Technologies IR2110STR	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110S	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110STRPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-2	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	16-PDIP	25 ns	17 ns	Independent		14 Leads 16-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET				0.3 in	7.62 mm