IR2110PBF

NRND

Infineon Technologies

THE IR2110 IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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IR2110PBF

NRND

Infineon Technologies

THE IR2110 IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2110PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	3.3 V

IR2110 Series

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Number of Drivers	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Package / Case [x]	Package / Case	Package / Case [y]	Input Type	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Gate Type	Package / Case	Package / Case	Package / Case	Package / Case [custom]	Package / Case [custom]
Infineon Technologies IR2110SPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	14-DIP	25 ns	17 ns	Independent	0.3 "	14-DIP	7.62 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-1PBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2		25 ns	17 ns	Independent		14-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET	7.62 mm	13 Leads	0.3 in
Infineon Technologies IR2110STR	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110S	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110STRPBF	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Surface Mount	500 V	Half-Bridge	2	16-SOIC	25 ns	17 ns	Independent	0.295 in	16-SOIC	7.5 mm	Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET
Infineon Technologies IR2110-2	2 A	2 A	150 °C	-40 °C	3.3 V	20 V	Through Hole	500 V	Half-Bridge	2	16-PDIP	25 ns	17 ns	Independent		14 Leads 16-DIP		Non-Inverting	9.5 V	6 V	IGBT N-Channel MOSFET				0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.96
		10	$ 2.27
		100	$ 2.02
		250	$ 1.88
		500	$ 1.84
		1000	$ 1.72
Digikey	Tube	1	$ 5.03
		10	$ 3.36
		25	$ 2.92
		100	$ 2.43
		250	$ 2.20
		500	$ 2.05
		1000	$ 1.93
		2500	$ 1.80
		5000	$ 1.74
Newark	Each	1	$ 3.39
		10	$ 2.43
		25	$ 2.36
		50	$ 2.28
		100	$ 2.20
		250	$ 2.09
		500	$ 2.02

Description

General part information

IR2110 Series

EiceDRIVER™ 500 Vhigh and low-sidegate driver ICwith typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package forIGBTsandMOSFETs. Also available in16 Lead SOIC WB.

Documents

Technical documentation and resources