RN49A1FE(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

Technical Specifications

Parameters and characteristics for this part

Specification	RN49A1FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz, 200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms, 2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ES6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Resistor - Emitter Base (R2)	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Toshiba Semiconductor and Storage RN49A1FE(TE85L,F)	50 V	2.2 kOhm 22 kOhms	500 nA	300 mV	1 NPN 1 PNP	47000 Ohms	200 MHz 250 MHz	100 mA	Surface Mount	SOT-563 SOT-666	ES6	80	100 mW
Toshiba Semiconductor and Storage RN49A1(TE85L,F)	50 V	2.2 kOhm 22 kOhms	500 nA	300 mV	1 NPN 1 PNP	47000 Ohms	200 MHz 250 MHz	100 mA	Surface Mount	6-TSSOP SC-88 SOT-363	US6	80	200 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6

Technical documentation and resources

No documents available