PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Resistor - Base (R1) | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Resistor - Emitter Base (R2) | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Mounting Type | Package / Case | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 50 V | 2.2 kOhm 22 kOhms | 500 nA | 300 mV | 1 NPN 1 PNP | 47000 Ohms | 200 MHz 250 MHz | 100 mA | Surface Mount | SOT-563 SOT-666 | ES6 | 80 | 100 mW |
Toshiba Semiconductor and Storage | 50 V | 2.2 kOhm 22 kOhms | 500 nA | 300 mV | 1 NPN 1 PNP | 47000 Ohms | 200 MHz 250 MHz | 100 mA | Surface Mount | 6-TSSOP SC-88 SOT-363 | US6 | 80 | 200 mW |