
RN49A1(TE85L,F)
ObsoleteToshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

RN49A1(TE85L,F)
ObsoleteToshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
Description
General part information
RN49A1 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 200mW Surface Mount US6
Technical Specifications
Parameters and characteristics for this part
| Specification | RN49A1(TE85L,F) |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 80 |
| Frequency - Transition (Options) | 200MHz, 250MHz |
| Mounting Type | Surface Mount |
| NPN Count | 1 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | US6 |
| PNP Count | 1 |
| Power - Max | 200 mW |
| Resistor - Base (R1) Resistance Options | 22kOhms, 2.2kOhms |
| Resistor - Emitter Base (R2) | 47 kOhm |
| Transistor Configuration | Pre-Biased, Dual |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available