STGW20H65FB

Obsolete

STMicroelectronics

IGBT 650V 40A 168W TO247

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STGW20H65FB

Obsolete

STMicroelectronics

IGBT 650V 40A 168W TO247

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW20H65FB

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	168 W
Supplier Device Package	TO-247-3
Switching Energy	77 µJ, 170 µJ
Td (on/off) @ 25°C	30 ns
Td (on/off) @ 25°C	139 ns
Test Condition	20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGW20IH125DF Series

1250 V, 20 A IH series trench gate field-stop IGBT

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	IGBT Type	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGW20NC60VD	-55 °C	150 °C	TO-247-3	31 ns 100 ns	2.5 V	220 µJ 330 µJ	3.3 Ohm 15 V 20 A 390 V	150 A	Through Hole	TO-247-3	60 A	44 ns	100 nC	200 W	600 V
STMicroelectronics STGW20IH125DF	-55 °C	175 ░C	TO-247-3		2.5 V	410 µJ	10 Ohm 15 A 15 V 600 V	80 A	Through Hole	TO-247	40 A		68 nC	259 W		-	106 ns	Trench Field Stop
STMicroelectronics STGW20H65FB	-55 °C	175 ░C	TO-247-3	30 ns	2 V	77 µJ 170 µJ	10 Ohm 15 V 20 A 400 V	80 A	Through Hole	TO-247-3	40 A		120 nC	168 W				Trench Field Stop	139 ns	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGW20IH125DF Series

These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.

Documents

Technical documentation and resources