STGW20IH125DF
ActiveSTMicroelectronics
1250 V, 20 A IH SERIES TRENCH GATE FIELD-STOP IGBT
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STGW20IH125DF
ActiveSTMicroelectronics
1250 V, 20 A IH SERIES TRENCH GATE FIELD-STOP IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW20IH125DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 68 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 259 W |
| Supplier Device Package | TO-247 |
| Switching Energy | 410 µJ |
| Td (on/off) @ 25°C | - |
| Td (on/off) @ 25°C | 106 ns |
| Test Condition | 600 V, 15 A, 10 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW20IH125DF Series
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
Documents
Technical documentation and resources