STGW20NC60VD
ActiveSTMicroelectronics
IGBT, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 PINS
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STGW20NC60VD
ActiveSTMicroelectronics
IGBT, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 PINS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW20NC60VD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 100 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Reverse Recovery Time (trr) | 44 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 220 µJ, 330 µJ |
| Td (on/off) @ 25°C | 31 ns, 100 ns |
| Test Condition | 390 V, 3.3 Ohm, 15 V, 20 A |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW20IH125DF Series
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.