Specification	TSM250N02DCQ RFG

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	5.8 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	775 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-VDFN Exposed Pad
Package Length	2 mm
Package Name	6-TDFN
Package Width	2 mm
Power - Max (Tc)	620 mW
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	800 mV

TSM250 Series

Part	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Package / Case	Package Length	Package Name	Package Width	Power - Max (Ta)	Power - Max (Tc)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM250NB06DCR RLG	1461 pF	2	N-Channel	Dual	60 V	30 A	7 A	25 mOhm	8-PowerTDFN	5 mm	8-PDFN	6 mm	2 W	48 W	4 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	22 nC
Taiwan Semiconductor Corporation TSM250N02CX	535 pF				20 V	5.8 A		25 mOhm	SC-59 SOT-23-3 TO-236-3		SOT-23				800 mV	Surface Mount			MOSFET (Metal Oxide)	7.7 nC	1.56 W	4.5 V	1.8 V	150 °C	10 V	N-Channel
Taiwan Semiconductor Corporation TSM250N02DCQ	775 pF	2	N-Channel	Dual	20 V	5.8 A		25 mOhm	6-VDFN Exposed Pad	2 mm	6-TDFN	2 mm		620 mW	800 mV	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	11 nC
Taiwan Semiconductor Corporation TSM250NB06LCV RGG	1307 pF				60 V	27 A	6 A	25 mOhm	8-PowerWDFN	3.15 mm	8-PDFN	3.1 mm			2.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	23 nC	1.9 W 42 W	10 V	4.5 V		20 V	N-Channel
Taiwan Semiconductor Corporation TSM250N02DCQ RFG	775 pF	2	N-Channel	Dual	20 V	5.8 A		25 mOhm	6-VDFN Exposed Pad	2 mm	6-TDFN	2 mm		620 mW	800 mV	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	11 nC
Taiwan Semiconductor Corporation TSM250NB06LDCR RLG	1314 pF	2	N-Channel	Dual	60 V	29 A	6 A	25 mOhm	8-PowerTDFN	5 mm	8-PDFN	6 mm	2 W	48 W	2.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	23 nC

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TSM250N02DCQ RFG | Datasheet