TSM250 Series

Catalog

MOSFET 2N-CH 60V 7A/30A 8DFN

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM250NB06DCR RLG	8-PowerTDFN	7 A 30 A	2 W 48 W	22 nC	8-PDFN (5x6)	-55 °C	150 °C	2 N-Channel (Dual)	Surface Mount	25 mOhm	60 V	1461 pF	MOSFET (Metal Oxide)	4 V
Taiwan Semiconductor Corporation TSM250N02DCQ	6-VDFN Exposed Pad	5.8 A			6-TDFN (2x2)	-55 °C	150 °C	2 N-Channel	Surface Mount	25 mOhm	20 V		MOSFET (Metal Oxide)	800 mV	775 pF	11 nC
Taiwan Semiconductor Corporation TSM250NB06LCV RGG	8-PowerWDFN	6 A 27 A		23 nC	8-PDFN (3.15x3.1)	-55 °C	150 °C		Surface Mount	25 mOhm	60 V		MOSFET (Metal Oxide)	2.5 V	1307 pF		20 V	4.5 V 10 V	N-Channel	1.9 W 42 W
Taiwan Semiconductor Corporation TSM250N02DCQ RFG	6-VDFN Exposed Pad	5.8 A			6-TDFN (2x2)	-55 °C	150 °C	2 N-Channel (Dual)	Surface Mount	25 mOhm	20 V		MOSFET (Metal Oxide)	800 mV	775 pF	11 nC
Taiwan Semiconductor Corporation TSM250NB06LDCR RLG	8-PowerTDFN	6 A 29 A	2 W 48 W	23 nC	8-PDFN (5x6)	-55 °C	150 °C	2 N-Channel (Dual)	Surface Mount	25 mOhm	60 V	1314 pF	MOSFET (Metal Oxide)	2.5 V