TSM250 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFET 2N-CH 60V 7A/30A 8DFN

Part	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Package / Case	Package Length	Package Name	Package Width	Power - Max (Ta)	Power - Max (Tc)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM250NB06DCR RLG	1461 pF	2	N-Channel	Dual	60 V	30 A	7 A	25 mOhm	8-PowerTDFN	5 mm	8-PDFN	6 mm	2 W	48 W	4 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	22 nC
Taiwan Semiconductor Corporation TSM250N02CX	535 pF				20 V	5.8 A		25 mOhm	SC-59 SOT-23-3 TO-236-3		SOT-23				800 mV	Surface Mount			MOSFET (Metal Oxide)	7.7 nC	1.56 W	4.5 V	1.8 V	150 °C	10 V	N-Channel
Taiwan Semiconductor Corporation TSM250N02DCQ	775 pF	2	N-Channel	Dual	20 V	5.8 A		25 mOhm	6-VDFN Exposed Pad	2 mm	6-TDFN	2 mm		620 mW	800 mV	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	11 nC
Taiwan Semiconductor Corporation TSM250NB06LCV RGG	1307 pF				60 V	27 A	6 A	25 mOhm	8-PowerWDFN	3.15 mm	8-PDFN	3.1 mm			2.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	23 nC	1.9 W 42 W	10 V	4.5 V		20 V	N-Channel
Taiwan Semiconductor Corporation TSM250N02DCQ RFG	775 pF	2	N-Channel	Dual	20 V	5.8 A		25 mOhm	6-VDFN Exposed Pad	2 mm	6-TDFN	2 mm		620 mW	800 mV	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	11 nC
Taiwan Semiconductor Corporation TSM250NB06LDCR RLG	1314 pF	2	N-Channel	Dual	60 V	29 A	6 A	25 mOhm	8-PowerTDFN	5 mm	8-PDFN	6 mm	2 W	48 W	2.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	23 nC