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TSM250N02DCQ - Symbol, Footprint, 3D Model

TSM250N02DCQ

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Taiwan Semiconductor Corporation

20V, 5.8A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

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TSM250N02DCQ - Symbol, Footprint, 3D Model

TSM250N02DCQ

Active
Taiwan Semiconductor Corporation

20V, 5.8A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM250N02DCQ
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C5.8 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]775 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device Package6-TDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 12000$ 0.37
24000$ 0.36

Description

General part information

TSM250 Series

Mosfet Array 20V 5.8A (Tc) 620mW (Tc) Surface Mount 6-TDFN (2x2)