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IPP65R150CFDAAKSA1 - TO-220-3

IPP65R150CFDAAKSA1

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Infineon Technologies

MOSFET, AEC-Q101, N-CH, 650V, TO-220-3

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IPP65R150CFDAAKSA1 - TO-220-3

IPP65R150CFDAAKSA1

Active
Infineon Technologies

MOSFET, AEC-Q101, N-CH, 650V, TO-220-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R150CFDAAKSA1
Current - Continuous Drain (Id) @ 25°C22.4 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]86 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]2340 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3
Power Dissipation (Max)195.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs150 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.29
50$ 3.40
100$ 2.91
500$ 2.85
NewarkEach 1$ 4.90
10$ 3.72
25$ 2.78
50$ 2.69
100$ 2.60
250$ 2.53
500$ 2.15

Description

General part information

IPP65R150 Series

N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources