IPP65R150CFDXKSA2

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Infineon Technologies

MOSFET N-CH 650V 22.4A TO220-3

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Infineon Technologies

MOSFET N-CH 650V 22.4A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R150CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	22.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	195.3 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Qualification	Grade
Infineon Technologies IPP65R150CFDXKSA2	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Infineon Technologies IPP65R150CFDXKSA1	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Infineon Technologies IPP65R150CFDAAKSA1	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-40 °C	150 °C	MOSFET (Metal Oxide)	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.98

General part information

N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3

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