IPP65R150 Series

Catalog

MOSFET N-CH 650V 22.4A TO220-3

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Qualification	Grade
Infineon Technologies IPP65R150CFDXKSA2	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Infineon Technologies IPP65R150CFDXKSA1	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Infineon Technologies IPP65R150CFDAAKSA1	650 V	20 V	2340 pF	PG-TO220-3	Through Hole	4.5 V	86 nC	N-Channel	195.3 W	10 V	150 mOhm	TO-220-3	22.4 A	-40 °C	150 °C	MOSFET (Metal Oxide)	AEC-Q101	Automotive